ace 230 3 b p - channel enhancement mode f i el d e ffect transistor ver 1. 2 1 d escription this p - channel enhancement mode power fets are produced with high cell density, dmos trench technology, which is especially used to minimize on - state resistance. this device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuit s, and low in - line power loss are needed in a very small outline surface mount package. features ? v ds = - 3 0v ? i d = - 3.6 a ? r ds(on) 58m @ v gs = - 10v ? r ds(on) 87 m @ v gs = - 4.5v ? high dens ity cell desi gn for low r ds(on) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s - 3 0 v gate - source voltage v gs s 20 v drain current continuous i d - 3.6 a pulsed (1) - 10 power dissipation 25 o c p d 1.4 w operating an d storage temperature range t j , t stg - 55 to 150 o c packaging type sot - 23 - 3 l 3 1 2 ordering i nformation ace 230 3 b xx + h sot - 23 - 3 l description 1 gate 2 source 3 drain bm : sot - 23 - 3 l pb - free halogen - free
ace 230 3 b p - channel enhancement mode f i el d e ffect transistor ver 1. 2 2 electrical characteristic s t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit off characteristics drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 3 0 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i dss v ds = - 3 0 v, v gs =0v - 1 ua gate - b o d y leakage , f o r w a r d i gss f v gs = + 20 v, v ds =0v 100 na gate - b o d y leakage , r e v e r s e i gss r v gs = - 20 v, v ds =0v - 1 0 0 na on characteristics ( 2 ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r ds(on) v gs = - 4.5v, i d = - 3 a 6 9 8 7 m v gs = - 1 0 v, i d = - 4 . 1 a 4 8 5 8 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 1 - 1 . 6 - 2 . 0 v forward transconductance g fs v ds = - 5v, i d = - 2.8a 4 6 s switching characteristics (3) turn - on delay time t d(on) v dd = - 6v,r l =6 i d = - 1a, v gen = - 4.5v r g =6 2 0 ns t u r n - o n r i s e t i m e t f 1 0 turn - off delay time t d(off) 6 5 t u r n - o f f f a l l t i m e t f 4 5 dynamic characteristics (3) input capacitance c iss v ds = - 6v, v gs =0v f =1.0mhz 6 8 0 pf output capacitance c oss 7 2 feedback capacitance c rss 5 8 drain - source diode characteristics and maximum ratings d r a i n - s o u r c e d i o d e f o r w a r d c u r r e n t ( 4 ) i s - 1 . 3 5 a d r a i n - s o u r c e d i o d e f o r w a r d v o l t a g e ( 2 ) v sd i s = - 1 a,v gs =0v - 0 . 6 - 0 . 8 - 1 v note: 1. pulse width limited by maximum junction temperature 2. puls e test: pw Q 300us, duty cycle Q 2% 3. guaranteed by design, not subject to production testing. 4. surface mounted on fr4 board, t < 5 sec.
ace 230 3 b p - channel enhancement mode f i el d e ffect transistor ver 1. 2 3 typical performance characteristics
ace 230 3 b p - channel enhancement mode f i el d e ffect transistor ver 1. 2 4 packing information sot - 23 - 3 l unit: mm
ace 230 3 b p - channel enhancement mode f i el d e ffect transistor ver 1. 2 5 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sust ain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support de vice or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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